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| SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 Features * Simple Drive Requirement * Lower On-Resistance 0 o 8 o 1.35 1.75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4505SS G2 G1 S1 S2 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings www..com Parameter Symbol VDS VGS 30 20 o Ratings -30 20 -8.4 -6.7 -30 2.0 0.016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 10 7.9 30 3 T otal Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 1 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) o Unless otherwise specified) Typ. _ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Max. _ _ Unit V V/oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS= 20V VDS=30V,VGS=0 VDS=24V,VGS=0 VGS=10V, ID=6A o 0.02 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 14 Drain-Source Leakage Current (Tj=70 C ) 2 o Static Drain-Source On-Resistance RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs m[ _ _ _ _ _ _ _ _ _ _ _ 20 65 _ _ VGS=4.5V, ID=4A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time www..com 23 6 14 14 10 36 17 1770 430 350 14 nC ID=9A VDS=24V VGS=4.5V _ VDD=15V _ ID=1 A nS VGS=10V RG=3.3 [ RD=15 [ _ _ Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2830 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=9A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ Max. 1.2 _ _ Unit V Test Condition IS=1.7A ,VGS=0V IS=9A,V GS=0V dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge 31 25 nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 2 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET o Electrical Characteristics P-Channel( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -30 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=-250uA Reference to 25oC, ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-30V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=-8A -0.02 _ _ _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 20 Drain-Source Leakage Current (Tj=70oC) Static Drain-Source On-Resistance 2 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs m[ _ _ _ _ _ _ _ _ _ _ _ 30 45 _ _ VGS=-4.5V, ID=-4A Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www..com 27 4 18 16 11 40 25 1580 540 450 14 nC ID=-8A VDS=-24V VGS=-4.5V _ VDS=-15V _ ID=-1A nS VGS=-10V RG=3.3[ RD=15 [ _ _ Input Capacitance 2530 _ _ Output Capacitance Reverse Transfer Capacitance Forward Transconductance pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-8A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. _ _ _ Typ. _ Max. -1.2 _ _ Unit V Test Condition IS=-1.7A, VGS=0V IS=-8A,VGS=0V dl/dt=100A/us Reverse Recovery Time Reverse Recovery Charge 40 32 nS nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board;135 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 3 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature http://www.SeCoSGmbH.com/ Fig 5. Forward Characteristics of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 4 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 5 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET P-Channel GND Description Typically a large storage capacitor is connected from this pin to ground to insure that the input 1.3V or open= output enable. NC tage does not sag below the minimum dropout voltage during the load V higher than Vout in order for the device to Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 6 of 7 SSG4505 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m[ P Channel -8.4A, -30V,RDS(ON) 20m[ Enhancement Mode Power Mos.FET P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev. B Page 7 of 7 |
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